Physics
Home > Physics > Options > The age of silicon > The Age of Silicon: 7. Limits to current devices
9.9 Option - The Age of Silicon: 7. Limits to current
devices
| Syllabus reference (October 2002
version) |
|
7.There are physics limits that may impact on the
future uses of computers
|
Students learn to:
|
Students:
|
Extract from Physics Stage 6 Syllabus (Amended
October 2002). © Board of Studies,
NSW.

gather, process and
analyse
information and use available
evidence to discuss
the possibility that there may be a limit on the growth of
computer power and this may require a reconceptualisation of
the way computers are designed
- There is a physical limit to how small you can make a
transistor before it fails as a binary switch (about 4 nm).
Thus, making smaller and smaller transistors on
silicon-based substrates will eventually hit this
limitation. If we want faster, more powerful computers,
other kinds of computers will need to be made.
- A good starting point is Moore's
law
from Wikipedia's free web-based
encyclopedia.
Moore's law (so called) provides a context for
discussing the change in computing power or complexity.
Gordon Moore (he worked for Intel and Intel make ICs) had
an article published in Electronics Magazine, 19 April 1965
titled "Cramming more components onto integrated
circuits". In that article he said:
The complexity for minimum component costs has
increased at a rate of roughly a factor of two per year ...
Certainly over the short term this rate can be expected to
continue, if not to increase. Over the longer term, the
rate of increase is a bit more uncertain, although there is
no reason to believe it will not remain nearly constant for
at least 10 years. That means by 1975, the number of
components per integrated circuit for minimum cost will be
65,000. I believe that such a large circuit can be built on
a single wafer.
- The initial observation proved remarkably accurate and
in 1975 he projected that the complexity would double every
two years into the future. The original observation was
dubbed "Moore's Law" by Caltech professor,
Carver Mead. Since then a popular form of the law
(complexity will double every eighteen months) has become
the goal that IC and memory (hard disk and random access)
manufacturers have set themselves.
- It is predicted that the limitation (4 nm) to the size
of silicon-based transistors will be reached in less than
twenty years. By then, it is predicted that new technology
will be ready to replace silicon-based transistors and that
Moore's Law will continue into the foreseeable future
on the back of this new technology.
- Speculation based on information from Intel and AMD
(two of the biggest chip manufacturers) has it that using
nickel gates in their silicon-based transistors will allow
smaller transistors to be made but they still be bigger
than the 4 nm limit mentioned above. This is just a
refinement on current technology. Gallium Arsenide is
already replacing silicon, but transitors made on that
substrate are not able to be made smaller than the 4 nm
limit.
- The ABC's News in Science website carried
a story (28 August 2000) about a
successful test of molecular-sized
switches
that worked hundreds of times. This
represents a first step toward the goal of molecular
computers. This article reports on a chip using molecular switches Densest IC ever made
Andre Kesteloot, Amateur Radio Research and Development Corporation Jan 27, 2007. Another possibility is to implant
computer-technology into humans (cyborg technology). The
combined power of the two may provide advantages to humans,
but is it really the next generation of computers or
another way of using what we already have?

identify
that the increased speed of computers has been accompanied by
a decrease in size of circuit elements
- The increase in speed since the first personal
computers (PCs) generally appeared (1980s) is due to the
increased sophistication of manufacturing processes making
silicon based ICs. These processes have allowed the
switching transistors to be reduced in size and placed
closer together on the silicon substrate.
